Advances in Photovoltaics: Part 3, Volume 90 (Semiconductors by Gerhard P. Willeke, Eicke R. Weber

By Gerhard P. Willeke, Eicke R. Weber

This quantity is the 3rd of a collection of 7 related to photovoltaics. sun cell-related applied sciences lined right here comprise: ribbon silicon; heterojunction crystalline silicon; wafer identical crystalline silicon; and different complicated silicon sunlight mobile constructions and processes.

Semiconductors and Semimetals has distinctive itself during the cautious choice of famous authors, editors, and individuals. initially widely recognized because the "Willardson and Beer" sequence, it has succeeded in publishing quite a few landmark volumes and chapters. The sequence publishes well timed, hugely appropriate volumes meant for long term effect and reflecting the actually interdisciplinary nature of the sphere. The volumes in Semiconductors and Semimetals were and should remain of serious curiosity to physicists, chemists, fabrics scientists, and machine engineers in academia, clinical laboratories and smooth industry.

  • Written and edited via across the world well known experts
  • Relevant to a large readership: physicists, chemists, fabrics scientists, and machine engineers in academia, clinical laboratories and glossy industry

Show description

Read or Download Advances in Photovoltaics: Part 3, Volume 90 (Semiconductors and Semimetals) PDF

Best microelectronics books

Vacuum Microelectronics

Professional insurance of vacuum microelectronics-principles, units, and functions the sphere of vacuum microelectronics has complex so rapidly that advertisement units are being fabricated, and functions are being built in monitors, instant communications, spacecraft, and electronics to be used in harsh environments.

Software-Implemented Hardware Fault Tolerance

This booklet offers the idea at the back of software-implemented fault tolerance, in addition to the sensible features had to positioned it to paintings on genuine examples. via comparing effectively the benefits and downsides of the already to be had techniques, the ebook presents a consultant to builders keen to undertake software-implemented fault tolerance of their purposes.

Programming the Intel Edison: Getting Started with Processing and Python

Discover ways to simply Create robot, IoT, and Wearable digital contraptions! Get up-and-running development state of the art Edison units with aid from this DIY consultant. Programming the Intel Edison: Getting begun with Processing and Python lays out the Edison’s robust beneficial properties and teaches the fundamentals of Internet-enabled embedded programming.

Extra info for Advances in Photovoltaics: Part 3, Volume 90 (Semiconductors and Semimetals)

Example text

This process adds only one new tool for masking, as the porous Si formation as well as etching of porous Si, PSG, and mask can be performed in the same wet bench already used for edge isolation, by adding more chemical baths. In addition, it uses only existing technologies and has been commercialized by Gebr. Schmid. As this approach of forming a selective emitter currently has the largest market share of the technologies described in this section (Gabor, 2012), some more information will be given.

For P concentrations below 1019 per cm3, single negatively charged vacancies dominate the diffusion mechanism. This results in the characteristic kink-and-tail shaped profile of P diffusion in c-Si whereby the tail is formed due to the “normal” diffusion mechanism involving vacancies (Fair and Tsai, 1977). During diffusion, time, temperature, and gas flows have an influence on the diffusion profile formed. To increase (double) the throughput, wafers are often loaded in the quartz boats back-to-back.

The etching reaction can be summarized as Si + 2H2 O + HOÀ ! 26) and consists of oxidation of Si, formation of a solvable salt and dissolving the salt in water (Neuhaus and Mu¨nzer, 2007). 7, which has consequences for surface passivation and saturation current densities of the emitter and the SCR. mc-Si does not offer a well-defined grain orientation at the wafer surface, as the grains are randomly distributed. Therefore, other texturing solutions had to be developed. , 2003). The texture attacks the Si surface first at areas where not all Si bonds are perfectly saturated.

Download PDF sample

Rated 4.68 of 5 – based on 8 votes