Advances in Photovoltaics: Part 4, Volume 92 (Semiconductors by Gerhard P. Willeke, Eicke R. Weber

By Gerhard P. Willeke, Eicke R. Weber

Advances in Photovoltaics: Part Four offers worthwhile info at the demanding situations confronted throughout the transformation of our strength offer method to extra effective, renewable energies.

The quantity discusses the subject from a world viewpoint, proposing the most recent details on photovoltaics, a cornerstone technology.

It covers all facets of this significant semiconductor know-how, reflecting at the large and dynamic advances which were made in this subject because 1975, whilst the 1st ebook on sun cells―written via Harold J. Hovel of IBM―was released as quantity eleven within the now well-known sequence on Semiconductors and Semimetals.

Readers will achieve a behind the curtain examine the continual and fast clinical improvement that ends up in the mandatory rate and price discount rates in worldwide commercial mass-production.

  • Written via major, the world over recognized specialists on his topic
  • Provides an in-depth evaluation of the present prestige and views of skinny movie PV technologies
  • Discusses the demanding situations confronted throughout the transformation of our power offer approach to extra effective, renewable energies
  • Delves deep into photovoltaics, a cornerstone technolog

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Extra info for Advances in Photovoltaics: Part 4, Volume 92 (Semiconductors and Semimetals)

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J. Cryst. Growth 360, 18–24. , 1918. Ein neues Verfahren zur Messung der Kristallisationsgeschwindigkeit der Metalle. Z. Phys. Chem. 92, 219–221. , 1958. Silicon crystals free of dislocations. J. Appl. Phys. 29, 736–737. , 1959. Growth of silicon crystals free from dislocations. J. Appl. Phys. 30 (4), 459–474. , 1980. Impurities in silicon solar cells. IEEE Trans. Electron Devices 27 (4), 677–687. , 2002. Plasma-refining process to provide solar-grade silicon. Sol. Energy Mater. Cells 72, 69–75.

Electron Devices 27 (4), 677–687. , 2002. Plasma-refining process to provide solar-grade silicon. Sol. Energy Mater. Cells 72, 69–75. , 2012. Silicon single crystal doped with gallium, indium, or aluminum US2012/0056135 A1. , 2007. Method for producing directionally solidified silicon ingots. 2007. , 2003. Czochralski growth of doped germanium with an applied rotating magnetic field. Cryst. Res. Technol. 38 (7–8), 659–668. , 2004. Analysis of microsegregation in RF-heated float zone growth of silicon— comparison to the radiation-heated process.

During the melting part, as much heat as possible has to be introduced into the system, and during growth, the latent heat has to be removed through the bottom plate. , 2012a), or more often, the base plate is water cooled. An advanced heater design had been developed by Lange et al. (2008) and Rudolph et al. (2011): separating the wall heater into sections and powering them by phase-shifted AC of a well-defined frequency, the heater acts as magnetic field device and generates a controlled melt flow.

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